Silicon Carbide (SiC) Bipolar Plate
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Silicon Carbide (SiC) Bipolar Plate

Silicon Carbide (SiC) Bipolar Plate

Cat No:FCSM-0056

Description

Sintered silicon carbide plate with high thermal conductivity and exceptional chemical inertness, specifically designed for high-temperature phosphoric acid fuel cells (PAFC).

Basic Information

Material Composition Sintered SiC
Thickness (μm) 2500
Density (g/cm³) 3.1
Surface Resistance (mΩ·cm²) < 15
Tensile Strength (MPa) 400
Thermal Conductivity (W/m·K) 120
Porosity (%) < 0.2
Operating Temp Max (°C) 1400
Flexural Strength (MPa) 450
Corrosion Resistance (μA/cm²) Excellent
Contact Angle (°) 75
Gas Permeability (cm³/cm²·s) < 10⁻⁹
Coefficient of Thermal Expansion (10⁻⁶/K) 4
Shore Hardness 2500 (HV)
Ash Content (%) 100
Mean Pore Size (μm) N/A
Compressive Strength (MPa) 2000
Electrical Conductivity (S/cm) 150
Specific Surface Area (m²/g) 1.5
Young's Modulus (GPa) 410
Chemical Stability Acid/Base Stable
Coating Material None
Surface Roughness (Ra) 0.4

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